? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t c = 25c to 150c 3000 v v cgr t j = 25c to 150c, r ge = 1m 3000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 26 a i c110 t c = 110c 11 a i cm t c = 25c, 1ms 98 a ssoa v ge = 15v, t vj = 125c, r g = 20 i cm = 98 a (rbsoa) clamped inductive load 1500 v p c t c = 25c 125 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c f c mounting force 20..120 / 4.5..27 nm/lb.in. v isol 50/60hz , 1 minute 4000 v~ weight 5 g ds100121b(06/12) IXBF12N300 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 3000 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces , v ge = 0v 25 a note 2, t j = 125c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c90 , v ge = 15v, note 1 2.8 3.2 v t j = 125c 3.5 v v ces = 3000v i c110 = 11a v ce(sat) 3.2v high voltage, high gain bimosfet tm monolithic bipolar mos transistor (electrically isolated tab) 1 = gate 5 = collector 2 = emitter isoplus i4-pak tm isolated tab 1 5 2 features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z 4000v ~ electrical isolation z high blocking voltage z high peak current capability z low saturation voltage advantages z low gate drive requirement z high power density applications z switch-mode and resonant-mode power supplies z capacitor discharge circuits z uninterrupted power supplies(ups) z laser drivers z ac switches
ixys reserves the right to change limits, test conditions and dimensions. IXBF12N300 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values ( t j = 25c unless otherwise specified) min. typ. max. g fs i c = i c90 , v ce = 10v, note 1 6.5 10.8 s c ies 1290 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 56 pf c res 19 pf q g 62 nc q ge i c = i c90 , v ge = 15v, v ce = 1000v 13 nc q gc 8.5 nc t d(on) 64 ns t r 140 ns t d(off) 180 ns t f 540 ns t d(on) 65 ns t r 395 ns t d(off) 175 ns t f 530 ns r thjc 1.00 c/w r thcs 0.15 c/w resistive switching times, t j = 125c i c = i c90 , v ge = 15v v ce = 1250v, r g = 10 resistive switching times, t j = 25c i c = i c90 v ge = 15v v ce = 1250v, r g = 10 reverse diode symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 12a, v ge = 0v 2.1 v t rr 1.4 s i rm 21 a i f = 6a, v ge = 0v, -di f /dt = 100a/ s v r = 100v, v ge = 0v isoplus i4-pak tm (hv) outline pin 1 = gate pin2 = emitter pin 3 = collector tab 4 = isolated notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway.
? 2012 ixys corporation, all rights reserved IXBF12N300 fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 25v 10v 15v 20v 5v fig. 3. output characteristics @ t j = 125oc 0 4 8 12 16 20 24 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 24a i c = 12a i c = 6a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5 7 9 1113151719212325 v ge - volts v ce - volts i c = 24a t j = 25oc 6a 12a fig. 6. input admittance 0 4 8 12 16 20 24 28 32 36 40 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions and dimensions. IXBF12N300 fig. 11. reverse-bias safe operating area 0 20 40 60 80 100 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 v ce - volts i c - amperes t j = 125oc r g = 20 ? dv / dt < 10v / ns fig. 13. maximum transient thermal impedance 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 12. maximum transient thermal impedance aaa 2 d = t p / t t p t d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 single pulse fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 45 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060 q g - nanocoulombs v ge - volts v ce = 1kv i c = 12a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 8. forward voltage drop of intrinsic diode 0 4 8 12 16 20 24 28 32 36 00.511.522.53 v f - volts i f - amperes t j = 125oc t j = 25oc
? 2012 ixys corporation, all rights reserved IXBF12N300 ixys ref: b_12n300(4p)6-07-12-b fig. 14. resistive turn-on rise time vs. collector current 0 100 200 300 400 500 600 6 8 10 12 14 16 18 20 22 24 i c - amperes t r - nanoseconds r g = 10 ? , v ge = 15v v ce = 1250v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 250 300 350 400 450 500 550 600 650 700 750 10 20 30 40 50 60 70 80 90 100 r g - ohms t r - nanoseconds 50 60 70 80 90 100 110 120 130 140 150 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 24a, 12a fig. 16. resistive turn-off switching times vs. junction temperature 200 300 400 500 600 700 800 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 140 150 160 170 180 190 200 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 1250v i c = 24a i c = 12a fig. 17. resistive turn-off switching times vs. collector current 0 200 400 600 800 1000 1200 1400 6 8 10 12 14 16 18 20 22 24 i c - amperes t f - nanoseconds 60 100 140 180 220 260 300 340 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 1250v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 0 100 200 300 400 500 600 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 ? , v ge = 15v v ce = 1250v i c = 12a i c = 24a fig. 18. resistive turn-off switching times vs. gate resistance 250 300 350 400 450 500 550 600 650 700 10 20 30 40 50 60 70 80 90 100 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 800 900 t d ( off ) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 24a i c = 12a
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